On-Wafer Electron Beam Detectors by Floating-Gate FinFET Technologies
نویسندگان
چکیده
منابع مشابه
Improved Output ESD Protection By Dynamic Gate Floating Design - Electron Devices, IEEE Transactions on
A dynamic gate floating design is proposed to improve ESD robustness of the CMOS output buffers with small drive capability. By using this novel design, the human-body-model (machine-model) ESD failure threshold of a 2-mA CMOS output buffer has been practically improved from 1 KV (100 V) to greater than 8 KV (1500 V) in a 0.35m CMOS process.
متن کاملDifferential Hot Electron Injection in an Adaptive Floating Gate Comparator
We introduce differential-mode hot electron injection for adapting and storing analog nonvolatile signed state variables. This approach is compatible with modern digital CMOS technologies and is readily extended to novel circuit applications. We highlight advantages of the technique by applying it to the design of an adaptive floating gate comparator (AFGC). This is the first use of this techni...
متن کاملNand Gate Using Finfet for Nanoscale Technology
ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...
متن کامل3D modeling of dual-gate FinFET
The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the ...
متن کاملAcoustic Resonance in an Independent-gate Finfet
This paper demonstrates the acoustic resonance of an Independent-Gate (IG) FinFET driven with internal dielectric transduction and sensed by piezoresistive modulation of the drain current through the transistor. An acoustic resonance at 37.1 GHz is obtained with a quality factor of 560, corresponding to an f.Q product of 2.1x10. The demonstrated hybrid NEMS-CMOS technology can provide RF CMOS c...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2021
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2021.3088393